2B005 Category 2B

Equipment “specially designed” for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, as follows, for substrates specified in column 2, by processes shown in column 1 in the “Materials Processing Table; Deposition Techniques” following 2E003.f (see List of Items Controlled), and “specially designed” automated handling, positioning, manipulation and control “components” therefor.

Category 2: Materials Processing

Reasons for control

• NS: National security
• AT: Anti-terrorism

Country chart

List-based license exceptions

Items

1. Items: a. Chemical vapor deposition (CVD)“production equipment”having all of the following:
2. a.1. A process modified for one of the following:
3. a.1.a. Pulsating CVD;
4. a.1.b. Controlled nucleation thermal deposition (CNTD); or
5. a.1.c. Plasma enhanced or plasma assisted CVD; and
6. a.2. Having any of the following:
7. a.2.a. Incorporating high vacuum (equal to or less than 0.01 Pa) rotating seals; or
8. a.2.b. Incorporating in situ coating thickness control;
9. b. Ion implantation “production equipment” having beam currents of 5 mA or more;
10. c. Electron beam physical vapor deposition (EB-PVD) “production equipment” incorporating power systems rated for over 80 kW and having any of the following:
11. c.1. A liquid pool level “laser” control system which regulates precisely the ingots feed rate; or
12. c.2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionized atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;
13. d. Plasma spraying “production equipment” having any of the following:
14. d.1. Operating at reduced pressure controlled atmosphere (equal or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0.01 Pa prior to the spraying process; or
15. d.2. Incorporating in situ coating thickness control;
16. e. Sputter deposition “production equipment” capable of current densities of 0.1 mA/mm 2 or higher at a deposition rate 15 µm/h or more;
17. f. Cathodic arc deposition “production equipment” incorporating a grid of electromagnets for steering control of the arc spot on the cathode;
18. g. Ion plating “production equipment” capable of in situ measurement of any of the following:
19. g.1. Coating thickness on the substrate and rate control; or
20. g.2. Optical characteristics.

Related controls

(1) This entry does not control chemical vapor deposition, cathodic arc, sputter deposition, ion plating or ion implantation equipment, “specially designed” for cutting or machining tools. (2) Vapor deposition equipment for the production of filamentary materials are controlled by 1B001 or 1B101. (3) Chemical Vapor Deposition furnaces designed or modified for densification of carbon-carbon composites are controlled by 2B105. (4) See also 2B999.i.

Source: eCFR, version 2026-08-01, retrieved 2026-08-20T04:04:59+00:00.