3C005 Category 3C

High resistivity materials as follows (See List of Items Controlled).

Category 3: Electronics

Country chart

List-based license exceptions

Items

1. Related Definition: N/A
2. a. Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga2O3), or diamond semiconductor “substrates”, or ingots, boules, or other preforms of those materials, having resistivities greater than 10,000 ohm-cm at 20 °C;
3. b. Polycrystalline “substrates” or polycrystalline ceramic “substrates”, having resistivities greater than 10,000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga2O3), or diamond on the surface of the “substrate”.

Related controls

See ECCN 3E001 for related development and production technology, and ECCN 3B991.b.1.b for related production equipment.

Source: eCFR, version 2026-08-01, retrieved 2026-08-20T04:04:59+00:00.